PART |
Description |
Maker |
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
K4D553235F-GC220 |
8M X 32 DDR DRAM, 0.45 ns, PBGA144
|
|
K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25 |
4M X 32 DDR DRAM, 0.35 ns, PBGA144 4M X 32 DDR DRAM, 0.45 ns, PBGA144
|
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3) 128Mb (16Mx8) DDR 266B (2.5-3-3) 16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
HY5MS7B2BLFP-6 |
16M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
EDK2516CBBH-10-E |
16M X 16 DDR DRAM, 7 ns, PBGA60
|
ELPIDA MEMORY INC
|
HYB18T256160AF-2.5 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84
|
QIMONDA AG
|
|